该工作介绍了一种新奇的方法，用于合成模板式石墨烯/过渡金属硫化物（TMD），例如用化学气相沉积（CVD）法合成二硫化钼（MoS2），它是用UV /臭氧处理的固体碳源1,2,3,4-四苯基萘（TPN）作为石墨烯的生长前驱体。其中对TPN膜进行紫外/臭氧处理可改善TPN和MoS2层之间的界面粘合力。具有界面键合的石墨烯/ MoS2异质结构表现出优异的电学和机械特性，通过降低接触电阻和提高弯曲稳定性可以促进电荷注入。如此紧密的接触还大大增强了MoS2场效应晶体管的场效应迁移率。所提出的直接合成石墨烯/TMD异质结构方法有望在基于2D材料的纳米电子学领域有广泛的应用。
 
Figure 1. 石墨烯/MoS2异质结构的合成及表征。（a）SiO2/Si基底上合成石墨烯/MoS2的示意图，（b-d）Raman表征数据，（e）高分辨横截面TEM图，（f）深度情况，（g）SAED图。                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                    
                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                  
 
Figure 2. 界面化学分析。（a-c）C 1s，Mo 3d，S 2p高分辨谱图，（d）Raman光谱比较。
 

Figure 3. 石墨烯/MoS2异质结构的电学性质和弯曲稳定性分析。
 

Figure 4. 所构建的MoS2-FETs器件的温度-依赖的转移特性和肖特基势垒高度情况。（a-b）用TrGr 和DiGr 作为S/D电极所构建的MoS2-FETs器件的I-V特性曲线，（c-d）用TrGr 和DiGr 作为S/D电极，MoS2-FETs在不同栅偏压下的曲线图，（e）dVDS/dIDS 与 1/IDS的函数关系，（f）肖特基势垒高度与栅偏压的函数关系

     该研究工作由韩国浦项科技大学Kilwon Cho课题组于2020年发表在Chemistry of Materials期刊上。原文：Direct CVD Growth of Graphene/MoS2 Heterostructure with Interfacial Bonding for Two-Dimensional Electronics